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Home
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>
Transistor
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MOSFET
MOSFET
1 Record
Part Number
Process
ALL
";
SJ
SGT
Trench
Planar
Configuration
Configuration
";
Dual
Single
Type
Channel
Type
";
P
N
N + P
V
DSS
(V)
Drain-Source
Voltage
ALL
0 ~ 20
20 ~ 25
25 ~ 30
30 ~ 50
50 ~ 60
60 ~ 200
>=200
V
GS
(V)
Gate-Source
Voltage
R
DS(on)
(Ω)
Static Drain-Source On Resistance
I
D
(A)
Continuous Drain Current
ALL
0.1 ~ 2.6
2.6 ~ 4.1
4.1 ~ 6.2
6.2 ~ 8.4
8.4 ~ 45
45 ~ 80
>= 80
P
D
(W)
Power Disspation
ALL
0 ~ 0.15
0.15 ~ 0.36
0.36 ~ 1.20
1.20 ~ 2.00
2 ~ 25
25 ~ 36
36 ~ 60
60 ~ 96
>= 96
Package
Case
";
DFNW3x3-8D
SSDE8404-C
Trench
Dual
N
30
± 20
35 (mΩ)
5
3
DFNW3x3-8D
-
-
-
P
-30
± 20
50 (mΩ)
-4
3
-
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